IndiumV3, Russie, Analysis, bibRecord, 000142

Photoconductivity of oxidized nanostructured PbTe(In) films

Identifieur interne : 000142 ( Russie/Analysis ); précédent : 000141; suivant : 000143

Photoconductivity of oxidized nanostructured PbTe(In) films

Auteurs : RBID : Pascal:09-0344385

Descripteurs français

Pascal (Inist)
- Photoconductivité, Joint grain, Valence, Phénomène transport, Dépendance fréquence, Dopage, Impureté, Addition indium, Nanostructure, Tellurure de plomb, Nanocristal, PbTe.
Wicri :
- geographic : Valence (Drôme).
- concept : Dopage.

English descriptors

KwdEn :
- Doping, Frequency dependence, Grain boundaries, Impurities, Indium additions, Lead tellurides, Nanocrystal, Nanostructures, Photoconductivity, Transport processes, Valence.

Abstract

Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2-300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature.

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Le document en format XML

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<author><name sortKey="Dobrovolsky, A A" uniqKey="Dobrovolsky A">A. A. Dobrovolsky</name>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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<author><name sortKey="Dashevsky, Z M" uniqKey="Dashevsky Z">Z. M. Dashevsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Engineering, Ben-Gurion University</s1>
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<country>Israël</country>
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<author><name sortKey="Kasiyan, V A" uniqKey="Kasiyan V">V. A. Kasiyan</name>
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<author><name sortKey="Ryabova, L I" uniqKey="Ryabova L">L. I. Ryabova</name>
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<author><name sortKey="Khokhlov, D R" uniqKey="Khokhlov D">D. R. Khokhlov</name>
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<term>Indium additions</term>
<term>Lead tellurides</term>
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<term>Nanostructures</term>
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<term>Valence</term>
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<front><div type="abstract" xml:lang="en">Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2-300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature.</div>
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Photoconductivity of oxidized nanostructured PbTe(In) films

Photoconductivity of oxidized nanostructured PbTe(In) films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri